BU2708AF DATASHEET PDF

Intended for use in horizontal www. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case dissipation. September 1 Rev 1. Philips Semiconductors. Silicon Diffused Power Transistor.

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Silicon Diffused Power Transistor. High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal. Features exceptional tolerance to base drive and collector current.

Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Stress above one. These are stress ratings only and. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification. All rights are reserved.

Reproduction in whole or in part is prohibited without the prior written consent of the. The information presented in this document does not form part of any quotation or contract, it is believed to be.

No liability will be accepted by the publisher for any. Publication thereof does not convey nor imply any license under patent or other. These products are not designed for use in life support appliances, devices or systems where malfunction of these. Philips customers using or selling these products.

Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case dissipation. September 1 Rev 1. September 2 Rev 1. Test circuit for V CEOsust. Switching times definitions. Oscilloscope display for V CEOsust.

Switching times test circuit. Switching times waveforms. DC current gain. Typical collector-emitter saturation voltage.

Typical base-emitter saturation voltage. Limit storage and fall time. Normalised power dissipation. Transient thermal impedance.

Reverse bias safe operating area. Refer to mounting instructions for F-pack envelopes. SOT; The seating plane is electrically isolated from all terminals. September 6 Rev 1. Product specification This data sheet contains final product specifications. Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Application information Where application information is given, it is advisory and does not form part of the specification. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 7 Rev 1.

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Silicon Diffused Power Transistor BU2708AF - Futurlec

Silicon Diffused Power Transistor. High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal. Features exceptional tolerance to base drive and collector current.

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2708AF Datasheet

Philips Semiconductors. Silicon Diffused Power Transistor. Product specification. High voltage, high speed switching npn transistor in a plastic full-pack envelope.

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